Monday, February 18, 2013

1302.3781 (R. C. Sterling et al.)

Two-dimensional ion trap lattice on a microchip for quantum simulation    [PDF]

R. C. Sterling, H. Rattanasonti, S. Weidt, K. Lake, P. Srinivasan, S. C. Webster, M. Kraft, W. K. Hensinger
Using a controllable quantum system it is possible to simulate other highly complex quantum systems efficiently overcoming an in-principle limitation of classical computing. Trapped ions constitute such a highly controllable quantum system. So far, no dedicated architectures for the simulation of two-dimensional spin lattices using trapped ions in radio-frequency ion traps have been produced, limiting the possibility of carrying out such quantum simulations on a large scale. We report the operation of a two-dimensional ion trap lattice integrated in a microchip capable of implementing quantum simulations of two-dimensional spin lattices. Our device provides a scalable microfabricated architecture for trapping such ion lattices with coupling strengths between neighbouring ions sufficient to provide a powerful platform for the implementation of quantum simulations. In order to realize this device we developed a specialist fabrication process that allows for the application of very large voltages. We fabricated a chip containing an array of microtraps forming a closely spaced ion lattice. We demonstrate reliable trapping of a lattice of ytterbium ions, measure long ion lifetimes and show the lattice is suitable for performing quantum simulations. We are also able to deterministically introduce defects into the lattice adding further classes of quantum simulations that can be performed. Additionally, we demonstrate rudimentary shuttling of single ions between neighbouring lattice sites. The successful operation of this device provides a powerful tool to obtain a new understanding of many quantum systems in nature. Another step-changing application of this device consists of the generation of two-dimensional cluster states for measurement-based quantum computing.
View original: http://arxiv.org/abs/1302.3781

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